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SCD5817 THRU SCD5819
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere
D TENTE PA
2010
FEATURES
.181(4.60) .173(4.40) .002(0.05)
0.091(2.30) 0.083(2.10)
R
2 0.0
0(0
.50
)
0.049(1.25) 0.033(0.85)
0.049(1.25) 0.033(0.85)
* Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications * Low profile package * Built-in strain relief * Metal to silicon rectifier , majority carrier conduction * Low power loss , High efficiency * High current capability , low VF * High surge capacity * For using in low voltage high frequency switching power supply, inverters , free wheeling , and polarity protection applications
0.049(1.25) 0.033(0.85)
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled Terminals : Solder plated , solderable per MIL-STD-750, Method 2026 Polarity : Laser marking
*Dimensions in inches and (millimeters)
TM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current @TC=75 C
o o
SYMBOLS VRRM VRMS VDC I (AV)
SCD5817 20 14 20
SCD5818
30 21 30
SCD5819
40 28 40
UNITS Volts Volts Volts Amps
1.0
Peak forward surge current 8.3ms single half sine-wave IFSM superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0 A (NOTE 1) Maximum instantaneous forward voltage at 3.0 A (NOTE 1) Maximum DC reverse current at rated DC blocking voltage Typical Junction capacitance ( NOTE 2 ) Typical thermal resistance ( NOTE3 ) Operating junction and storage temperature range
NOTES : (1) Pulse test with PW=300usec , 1% duty cycle. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts. (3) Thermal Resistance Junction to Ambient
25
Amps
VF
0.45 0.75
0.55 0.875 0.5
0.60 0.90
Volts
@TA=25 C @TA=100 C CJ R
JA
o
o
IR 10 110 80 -50 to +125
o
mA
pF C/W
o
TJ,TSTG
C
REV. : 1
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES SCD5817 THRU SCD5819
FIG.1 - FORWARD CURRENT DERATING CURVE 1.0 AVERAGE FORWARD RECTIFIED CURRENT, AMPERES PEAK FORWARD SURGE CURRENT, AMPERES 30 25 20 15 10 5 0 0 25 50 75 100 125
o
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
Single Phase Half Wave 60HZ Resistive or Inductive
8.3ms Single Half Sine-Wave (JEDEC Method)
0.5
0 150 175 CASE TEMPERATURE, C
1
10 NUMBER OF CYCLES AT 60Hz
100
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10.00 IINSTANTANEOUS FORWARD CURRENT, AMPERES INSTANTANEOUS REVERSE CURRENT, ( mA ) 100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT
SCD5818 SCD5817 SCD5819
10
1.00
1.0
TJ=125 C
o
TJ=25 C
o
0.10
0.10
0.01
TJ=25 C
o
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS
.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE 400
TJ = 25 C
o
JUNCTION CAPACITANCE, pF
100
10 .1 1.0 4 10 100 REVERSE VOLTAGE, VOLTS
REV. : 0
Zowie Technology Corporation

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